RF3710 Datasheet

Type Designator: IRF3710
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ – Maximum Power Dissipation: 200 W
|Vds|ⓘ – Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ – Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ – Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ – Maximum Drain Current: 57 A
Tj ⓘ – Maximum Junction Temperature: 175 °C
Qg ⓘ – Total Gate Charge: 130(max) nC
tr ⓘ – Rise Time: 58 nS
Cossⓘ – Output Capacitance: 410 pF
Rds ⓘ – Maximum Drain-Source On-State Resistance: 0.023 Ohm